The electronic structure of mixed self-assembled monolayers

摘要

The electronic structure of mixed self-assembled monolayers (SAMs) on Au(111) surfaces is modeled using slab-type density-functional theory calculations. The studied molecules have a dipolar character induced by polar and electron donating or accepting tail-group substituents. The resulting electronic structure of mixed layers is found to differ qualitatively from a simple superposition of those of the respective pure layers. Specifically, the positions of the frontier electronic states are shifted relative to the metal Fermi level, with the sign and magnitude of that shift depending on the dipole moment of the molecules and the mixing ratio in the film. This appears counterintuitive considering previous investigations, in which it has been shown that, for densely packed layers, tail-group substituents have no impact on the interfacial energy-level alignment. The seeming contradiction can be lifted by considering the local electrostatic interactions within the films in both mixed and homogeneous monolayers. Beyond that, we show that mixed SAMs provide an efficient tool for continuously tuning substrate work functions over a range that far exceeds that accessible by merely changing the coverage of homogeneous layers, with the net effect depending linearly on the mixing ratio in agreement with recent experimental findings.