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Semiconducting enriched carbon nanotube aligned arrays of tunable density and their electrical transport properties

机译:可调密度的半导体富集碳纳米管排列阵列及其电传输特性

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We demonstrate assembly of solution-processed semiconducting enriched (99%) single-walled carbon nanotubes (s-SWNTs) in an array with varying linear density via ac dielectrophoresis (DEP) and investigate detailed electronic transport properties of the fabricated devices. We show that (i) the quality of the alignment varies with frequency of the applied voltage and that (ii) by varying the frequency and concentration of the solution, we can control the linear density of the s-SWNTs in the array from 1/μm to 25/μm. The DEP assembled s-SWNT devices provide the opportunity to investigate the transport property of the arrays in the direct transport regime. Room temperature electron transport measurements of the fabricated devices show that with increasing nanotube density the device mobility increases while the current on-off ratio decreases dramatically. For the dense array, the device current density was 16 μA/μm, on-conductance was 390 μS, and sheet resistance was 30 kΩ/□. These values are the best reported so far for any semiconducting nanotube array.
机译:我们演示了溶液处理的半导体富集(99%)单壁碳纳米管(s-SWNTs)的组装,该阵列具有通过交流电电泳(DEP)改变的线密度,并研究了所制造器件的详细电子传输特性。我们证明(i)排列质量随施加电压的频率而变化,并且(ii)通过改变溶液的频率和浓度,我们可以将阵列中s-SWNT的线性密度从1 / μm至25 /μm。 DEP组装的s-SWNT装置提供了研究直接传输方式中阵列的传输特性的机会。制成的器件的室温电子传输测量结果表明,随着纳米管密度的增加,器件的迁移率增加,而电流开-关比却急剧下降。对于致密阵列,器件电流密度为16μA/μm,导通电阻为390μS,薄层电阻为30kΩ/□。对于任何半导体纳米管阵列,这些值是迄今为止报道得最好的。

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