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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Photoelectrochemical investigations of cadmium sulphide (CdS) thin film electrodes prepared by spray pyrolysis
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Photoelectrochemical investigations of cadmium sulphide (CdS) thin film electrodes prepared by spray pyrolysis

机译:喷雾热解法制备硫化镉(CdS)薄膜电极的光电化学研究

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摘要

Polycrystalline cadmium sulphide (CdS) thin films have been prepared by spraying a mixture of an equimolar aqueous solutions of cadmium chloride and thiourea on preheated fluorine doped tin oxide (FTO) coated glass substrates at different substrate temperatures. The cell configurations n-CdS/1 M (NaOH + Na_2S + S)/C were used for studying the capacitance-voltage (C-V) characteristics in dark, current-voltage (I-V) characteristics in dark and under illumination, photovoltaic power output and spectral response characteristics of the as deposited thin films. Photoelectrochemical study shows that as deposited CdS thin films exhibits n-type of conductivity. The spectral response characteristics of the films at room temperature show a prominent sharp peak at 500 nm leading to optical bandgap energy of 2.48 eV. It is found that fill factor and efficiency are maximum for photoelectrode deposited at 300°C. This is due to low resistance; high flat band potential, maximum open circuit voltage as well as maximum short-circuit current. The measured values of efficiency (?) and fill factor (FF) are found to be 0.17% and 0.38 respectively for film deposited at 300 °C.
机译:多晶硫化镉(CdS)薄膜是通过在不同基板温度下,将等摩尔氯化镉和硫脲水溶液的混合物喷涂到预热的氟掺杂氧化锡(FTO)涂层玻璃基板上而制备的。电池配置n-CdS / 1 M(NaOH + Na_2S + S)/ C用于研究暗处的电容电压(CV)特性,暗处和光照下的电流电压(IV)特性,光伏功率输出和沉积薄膜的光谱响应特性。光电化学研究表明,沉积的CdS薄膜具有n型导电性。薄膜在室温下的光谱响应特性在500 nm处显示出明显的尖峰,导致光带隙能量为2.48 eV。发现在300℃下沉积的光电极的填充因子和效率最大。这是因为电阻低。高平坦带电势,最大开路电压以及最大短路电流。发现在300℃下沉积的膜的效率(η)和填充因子(FF)的测量值分别为0.17%和0.38。

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