Single layer graphene electrodes for quantum dot-light emitting diodes

摘要

Single layer graphene was employed as the electrode in quantum dot-light emitting diodes (QD-LEDs) to replace indium tin oxide (ITO). The graphene layer demonstrated low surface roughness, good hole injection ability, and proper work function matching with the poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) layer. Together with the hole transport layer and electron transport layer, the fabricated QD-LED showed good current efficiency and power efficiency, which were even higher than an ITO-based similar device under low current density. The result indicates that graphene can be used as anodes to replace ITO in QD-LEDs.