XeF_2 gas-assisted focused-electron-beaminduced etching of GaAs with 30 nm resolution

摘要

We demonstrate the gas-assisted focused-electron-beam (FEB)-induced etching of GaAs with a resolution of 30 nm at room temperature. We use a scanning electron microscope (SEM) in a dual beam focused ion beam together with xenon difluoride (XeF_2) that can be injected by a needle directly onto the sample surface. We show that the FEB-induced etching with XeF_2 as a precursor gas results in isotropic and smooth etching of GaAs, while the etch rate depends strongly on the beam current and the electron energy. The natural oxide of GaAs at the sample surface inhibits the etching process; hence, oxide removal in combination with chemical surface passivation is necessary as a strategy to enable this high-resolution etching alternative for GaAs.