Nonvolatile gating effects on radicals-containing vanadium oxide nanowires by gas molecule absorption and diffusion

摘要

The charge conduction of a single nanowire of radicals-containing vanadium oxides was experimentally studied and found to be modulated by different gas exposures, showing a gating effect by the adsorption and absorption of different gas molecules. After N_2 and O_2 gas are introduced, the nanowires show an abrupt increase of the resistance but show the opposite trend within a longer timescale of several ks. The introduction of N_2 and O_2 can respectively 'write' the nanowire into high and low resistance states, which are metastable in a high vacuum. The long-term gating effect which was attributed to the interlayer diffusion of the gas molecules can be registered on the nanowire in the high vacuum environment.