Junctionless Silicon-Nanowire Gate-All-Around Tunnel Field Effect Transistor

摘要

This work presents the performance investigation of junctionless silicon-nanowire (Si-NW) gate-all-around (GAA) n-type tunnel field effect transistor (nTFET) and the results are compared with conventional Si-NW GAA nTFET. Two devices are compared on the basis of same off-state leakage current. Our results show that the performance of junctionless Si-NW GAA nTFET (Si-NW GAA nJLTFET) is comparable to that of a conventional Si-NW GAA nTFET. Furthermore, improvement in on-current for the Si-NW GAA nJLTFET is achieved by reducing the radius of cylindrical semi-conducting nanowire. The problem of random dopant fluctuations would likely be absent in Si-NW GAA nJLTFET. Moreover, the fabrication of junctionless Si-NW GAA nTFET would cut down the thermal budget, since it does not require high-temperature doping/annealing processes.