Using substrate transfer processes, we have fabricated heterojunction bipolar transistors with submicrometer emitter-base and collector-base junctions, minimizing RC parasitics and increasing f/sub max/ to 500 GHz. The process also provides a microstrip wiring environment on a low-/spl epsiv//sub r/ dielectric substrate. First design iterations of emitter-coupled-logic master-slave flip-flops exhibit 48 GHz maximum clock frequency when connected as static frequency dividers. Baseband amplifiers have been demonstrated with bandwidths up to 85 GHz.
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机译:使用衬底转移工艺,我们制造了具有亚微米级发射极-基极和集电极-基极结的异质结双极晶体管,从而将RC寄生效应降至最低,并将f / sub max /提高至500 GHz。该方法还在低/ spl epsiv // sub r /电介质衬底上提供微带布线环境。当作为静态分频器连接时,发射极耦合逻辑主从触发器的第一个设计迭代显示48 GHz最大时钟频率。已证明带宽高达85 GHz的基带放大器。
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