Bipolar transistor epilayer design using the MAIDS mixed-levelsimulator

摘要

In this paper, we address the epilayer design of the bipolarntransistor using the one-dimensional (1-D) mixed-level simulator MAIDSn(microwave active integral device simulator). MAIDS facilitatesnsimulation of the electrical behavior of bipolar (hetero) junctionntransistors with various doping profiles and under different signalnconditions in a realistic circuit environment. MAIDS as implementednwithin Hewlett Packard's microwave design system is a useful andnpromising tool in the development of bipolar transistors fornlarge-signal conditions. Using MAIDS, we have identified the dominantnbipolar transistor distortion sources with respect to the biasingnconditions. Simulation results are compared with small- and large-signalnmeasurements for the BFQ135 transistor, which has been developed forncable television (CATV) applications. By analyzing the measured andnsimulated data, we have developed an optimum epilayer design map fornthird-order intermodulation distortion that has proven to benparticularly useful in the epilayer dimensioning of transistors for CATVnapplications