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首页> 外文期刊>IEEE Journal of Solid-State Circuits >Development of a GaAs monolithic surface acoustic wave integratedcircuit
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Development of a GaAs monolithic surface acoustic wave integratedcircuit

机译:GaAs单片表面声波集成电路的研制

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摘要

An oscillator technology using surface acoustic wave (SAW) delaynlines integrated with GaAs MESFET electronics has been developed fornGaAs-based integrated microsensor applications. The oscillator consistsnof a two-port SAW delay line in a feedback loop with a four-stage GaAsnMESFET amplifier. Oscillators with frequencies of 470, 350, and 200 MHznhave been designed and fabricated. This oscillator technology is mostnsuitable for sensor applications but can logically be extended tonradio-frequency oscillator and filter applications by methods well knownnfor other piezoelectric substrates
机译:已经针对基于nGaAs的集成微传感器应用开发了一种与表面声波(SAW)延迟线和GaAs MESFET电子设备集成在一起的振荡器技术。该振荡器由一个带四级GaAsnMESFET放大器的反馈环路中的两端口SAW延迟线组成。已经设计并制造了频率为470、350和200 MHz的振荡器。该振荡器技术最适合于传感器应用,但可以通过其他压电基板众所周知的方法在逻辑上扩展为吨射频振荡器和滤波器应用

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