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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 100-mW 4×10 Gb/s transceiver in 80-nm CMOS for high-density optical interconnects
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A 100-mW 4×10 Gb/s transceiver in 80-nm CMOS for high-density optical interconnects

机译:用于80纳米CMOS的100mW 4×10 Gb / s收发器,用于高密度光学互连

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This paper describes a quad optical transceiver for low-power high-density short-distance optical data communication. Each channel transmits 10 Gb/s over a multimode (MM) fiber and features a link margin of 5.2 dB at a bit error rate (BER) of 10-12. The transmit and receive amplifying circuits are implemented in an 80-nm digital CMOS process. Each driver consumes 2 mW from a 0.8-V supply, and each vertical cavity surface-emitting laser (VCSEL) requires 7 mA from a 2.4-V supply. The receiver excluding the output buffer consumes 6 mW from a 1.1-V supply per channel and achieves a transimpedance gain of 80.1 dBΩ. The isolation to the neighboring channels is >30dB including the bond wires and optical components. A detailed link budget analysis takes the relevant system impairments as losses and power penalties into account, derives the specifications for the electrical circuits, and accurately predicts the link performance. This work presents the highest serial data rate for CMOS transceiver arrays and the lowest power consumption per data rate reported to date.
机译:本文介绍了一种用于低功率高密度短距离光数据通信的四路光收发器。每个通道在多模(MM)光纤上传输10 Gb / s,并且在10-12的误码率(BER)下具有5.2 dB的链路余量。发射和接收放大电路以80纳米数字CMOS工艺实现。每个驱动器从0.8V电源消耗2 mW的功率,每个垂直腔表面发射激光器(VCSEL)从2.4V电源消耗7 mA的电流。不包括输出缓冲器的接收器每通道从1.1V电源消耗6mW的功率,并实现80.1dBΩ的跨阻增益。包括键合线和光学组件,到相邻通道的隔离度> 30dB。详细的链路预算分析将相关的系统损害作为损耗和功率损失考虑在内,得出电路的规格,并准确预测链路性能。这项工作提出了迄今为止最高的CMOS收发器阵列串行数据速率和最低的每数据速率功耗。

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