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Multiaxis and multibeam technology for high throughput maskless E-beam lithography

机译:用于高通量无掩模电子束光刻的多轴和多束技术

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The authors have devised a new maskless E-beam lithography method which can achieve a throughput of 10 wph which the authors are calling a “multiaxis programmable shaped beam” (multiaxis PSB). It is a kind of massive parallel electron beam lithography wherein more than 250 000 beams write a wafer and the total beam current reaches a hundred microamperes. It may be difficult to write a pattern finer than 10 nm with more than 1 μA beam current at 50 kV with a single column because of blurring from Coulomb interaction, so the multiaxis PSB system divides all the beams into 87 groups where each group has 2500–10 000 beams formed by a small column arrayed in a 26 × 33 mm2 lattice. The small column is called a column element (CE) and each CE has an emitter, apertures, deflectors, and small lenses. The key technologies of the multiaxis system are a lens, emitter, and blankers for individual beamlets. The authors have proposed new ideas for these issues and made fundamental experiments.
机译:作者设计了一种新的无掩模电子束光刻方法,该方法可以实现10 wph的通量,作者称其为“多轴可编程成形光束”(多轴PSB)。这是一种大规模的平行电子束光刻,其中超过25万束电子束写入晶圆,总束流达到100微安。由于库仑相互作用的模糊,可能难以在50 kV的单列上用超过1μA的束电流写出小于10 nm的图案,因此多轴PSB系统将所有束分成87组,每组有2500个由26×33 mm 2 晶格排列的小圆柱形成的–10,000条光束。小列称为列元素(CE),每个CE都有一个发射器,孔,偏转器和小透镜。多轴系统的关键技术是用于单个子束的透镜,发射器和消隐器。作者针对这些问题提出了新的思路,并进行了基础实验。

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