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A 100-MHz ultrasonic transducer array using ZnO thin films

机译:使用ZnO薄膜的100MHz超声换能器阵列

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A 100-MHz ultrasonic linear transducer array made from anpiezoelectric zinc oxide thin film on a sapphire substrate was developednand evaluated. Epitaxial, high-acoustic quality 10-Μm-thick ZnO filmnlayers were produced by rf-magnetron sputter deposition onto an(111)-oriented gold film (with a chromium adhesion layer) that wasnvacuum-evaporated onto a (0001) sapphire surface. We found that, innwell-oriented growth of gold, it is important to control the chromiumnsublayer thickness (less than 5 nm). An array was constructed bynphotolithography with an appropriate etch. V-shaped grooves betweennadjacent elements were formed by using an anisotropic etchant (HCl andnHNO3-based) that preferentially etched the c-plane of ZnO.nTypical array elements were 90 Μm wide, 3.2 mm long, and 10 Μmnthick, and the pitch of an array was typically 100 Μm. Our finenuniform array resulted in uniform ultrasonic response of individualnelements throughout the array. For a 32-element array, the ultrasoundnbeam in the azimuth plane in water could be electronically focused innthe 100 MHz range to obtain a half-amplitude width of 60 Μm at thenfocal depth, agreeing well with theoretical predictions. Besides the usendemonstrated with this present transducer, piezoelectric thin filmsnshould also lead to fabrication of various other kinds of ultrasonicntransducers that can operate at high frequencies and should providenopportunities for miniaturizing transducers and making integratednultrasonic devices
机译:在蓝宝石衬底上开发了由压电压电氧化锌薄膜制成的100 MHz超声线性换能器阵列,并进行了评估。通过射频磁控溅射沉积到(111)取向的金膜(具有铬粘附层)上,真空蒸镀到(0001)蓝宝石表面上,生产出外延,高声品质的10微米厚的ZnO薄膜层。我们发现,向内生长的金的生长,重要的是控制铬亚层的厚度(小于5 nm)。通过光刻和适当的蚀刻来构造阵列。通过使用优先腐蚀ZnO c平面的各向异性蚀刻剂(HCl和nHNO3基)在相邻元素之间形成V形凹槽.n典型的阵列元素宽90微米,长3.2毫米,厚10微米,阵列通常为100μm。我们的精细均匀阵列导致整个阵列中单个元素的均匀超声响应。对于32个元素的阵列,可以将电子在水中的方位平面中的超声波束聚焦在100 MHz范围内,以便在当时的焦深处获得60μm的半振幅宽度,这与理论预测非常吻合。除了本换能器演示的用途外,压电薄膜还应导致制造其他各种超声波换能器,这些换能器可以在高频下工作,并且应提供使换能器小型化和制造集成超声设备的机会。

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