首页> 美国卫生研究院文献>Micromachines >Development of a High-Density Piezoelectric Micromachined Ultrasonic Transducer Array Based on Patterned Aluminum Nitride Thin Film
【2h】

Development of a High-Density Piezoelectric Micromachined Ultrasonic Transducer Array Based on Patterned Aluminum Nitride Thin Film

机译:基于图案化氮化铝薄膜的高密度压电微加工超声换能器阵列的研制

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

This study presents the fabrication and characterization of a piezoelectric micromachined ultrasonic transducer (pMUT; radius: 40 µm) using a patterned aluminum nitride (AlN) thin film as the active piezoelectric material. A 20 × 20 array of pMUTs using a 1 µm thick AlN thin film was designed and fabricated on a 2 × 2 mm footprint for a high fill factor. Based on the electrical impedance and phase of the pMUT array, the electromechanical coefficient was ~1.7% at the average resonant frequency of 2.82 MHz in air. Dynamic displacement of the pMUT surface was characterized by scanning laser Doppler vibrometry. The pressure output while immersed in water was 19.79 kPa when calculated based on the peak displacement at the resonant frequency. The proposed AlN pMUT array has potential applications in biomedical sensing for healthcare, medical imaging, and biometrics.
机译:这项研究介绍了使用图案化的氮化铝(AlN)薄膜作为活性压电材料的压电微机械超声换能器(pMUT;半径:40 µm)的制造和表征。设计并使用2×2 mm的占位面积设计并制造了使用1 µm厚的AlN薄膜的20×20的pMUT阵列,以实现高填充因子。根据pMUT阵列的电阻抗和相位,在空气中的平均谐振频率为2.82 MHz时,机电系数约为1.7%。通过扫描激光多普勒振动法表征了pMUT表面的动态位移。当基于共振频率下的峰值位移计算时,浸入水中的压力输出为19.79 kPa。拟议的AlN pMUT阵列在医疗保健,医学成像和生物识别的生物医学传感方面具有潜在的应用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号