Novel room temperature multiferroics for random access memory elements

摘要

We have fabricated a variety of PZT-PFW (P bZr0.52Ti0.48O3)1ߝx(PbFe2/3W1/3O3)x [PZTFWx; 0.2 2 (0.22 C/m2) to zero (relaxor state). This offers the possibility of three-state logic (+P, 0, ߝP) and magnetically switched polarizations. Because the switching is of large magnitude (unlike the very small nanocoulomb per centimeter squared values in terbium manganites) and at room-temperature, commercial devices should be possible.