Resistance switching element, phase change element, resistance random access memory, phase change random access memory and method for reading resistance random access memory and phase change random access memory

摘要

resistance change the print element, the phase change recording element, the resistance random access memory and that the information reading method and a phase change random The memory access method and the information reading is started. Resistance change random access memory according to the present invention achieves an array of resistance-variable elements are arranged in rows and columns record. The resistance change recording device is the source region and the drain region is formed along the arrangement direction of the column, between the source region and the drain region in the channel region is formed in a shape elongated along the array direction of heat on the substrate and the channel region is formed , and a bit line made of a conductive material. And it is formed on the bit line, by the electrical resistance signal is formed by extending long along the arrangement direction of the line on the resistance variable layer and the resistance layer being made of a material which changes shape, and a word line consisting of a conductive material . And each of the resistance print elements share a resistance change the print element and the source region, the drain region and the bit line are adjacent in the arrangement direction of the column, share the resistance element and the write word line adjacent in the arrangement direction of the line, form the array. In the resistance random access memory and phase change random access memory according to the present invention is a part for use in an information recording and reading information are separated, is not influenced by the information read at the adjacent element is thereby eliminating the possibility of misreading.