Electrical Characterization of VLSI (Very Large Scale Integrated) RAMs (Random Access Memories) and PROMs (Programmable Random Access Memories)

摘要

Electrical characterizations were performed on 256K and 1M dynamic RAMS, 64K static RAMs, 64K PROMs, and 64KEE PROMs available from the merchant semiconductor industry. Based on the data obtained on the DRAMs, SRAMs and PROMs, parameter limits were established and proposed for the draft MIL-M-38510/XXX specifications. Also, based on the data obtained on the EEPROMs, parameter limits were established and a recommended test methodology was proposed. Gate array status and recommendations were also made. The data, proposed limits and test methodologies and the related discussions are presented.