A Fully Analytical Current Model of Two‑Input TFETs Considering the Channel Coupling Effects

摘要

In this paper, a fully analytical current model of the two-input double-gate TFET is derived considering the channel couplingeffects caused by different biasing voltages of front and back gates. The potential model of the channel surface is accuratelyconstructed by solving the quasi two-dimensional Poisson equation with a reasonable assumption for the potential on thechannel surface. Based on derived potential model and energy band distribution along the channel, the tunneling generationrate around the tunneling junction is calculated, and then the analytical expression for the drain current of the two-inputdouble-gate TFET is derived. Furthermore, the impact of the device parameters on device characteristics is explored byusing the developed model. The proposed model is used to guide collaborative optimization of devices. The results showthe excellent match between the results calculated by the proposed model and TCAD simulations in a wide range of deviceand process parameters.