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Biomimetic antireflective AlInP nanostructures fabricated by lithography-free method for solar cell applications

机译:通过无光刻法制造的仿生抗反射AlInP纳米结构,用于太阳能电池应用

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We present biomimetic antireflective AlInP nanostructures fabricated by inductively coupled plasma etching using Ag etch masks, which were easily formed by spin-coating Ag ink and subsequent sintering process on a hotplate without any lithography process and complicated equipments, for compound semiconductor based solar cell applications. This lithography-free technique is a simple, cost-effective, and high throughput method. The fabricated AlInP nanostructures demonstrated drastically reduced the hemispherical reflectance and solar-weighted reflectance (SWR) compared to that of bulk AlInP in the wavelength range of 300-870 nm. The incident angle-dependent SWR of the AlInP nanostructures remained below 4% up to an incident angle of 50°. Therefore, the biomimetic antireflective AlInP nanostructures fabricated by using the lithography-free method hold great potential for use in compound semiconductor based solar cell applications.
机译:我们介绍了仿生抗反射AlInP纳米结构,该结构通过使用银蚀刻掩模的电感耦合等离子体蚀刻制造而成,可轻松地通过在电炉上旋涂Ag墨水并随后在电炉上进行烧结工艺来形成仿生抗反射AlInP纳米结构,而无需使用任何光刻工艺和复杂的设备,即可用于基于化合物半导体的太阳能电池应用。这种无光刻技术是一种简单,经济高效的高通量方法。与在300-870 nm波长范围内的整体AlInP相比,所制造的AlInP纳米结构显示出大大降低的半球反射率和太阳加权反射率(SWR)。 AlInP纳米结构的入射角依存SWR保持在4%以下,直至入射角为50°。因此,通过使用无光刻法制造的仿生抗反射AlInP纳米结构具有巨大的潜力,可用于基于化合物半导体的太阳能电池应用中。

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