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Biomimetic antireflective AlInP nanostructures fabricated by lithography-free method for solar cell applications

机译:用于无光细胞应用的无光刻方法制造的生物浸渍抗反射alinP纳米结构

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We present biomimetic antireflective AlInP nanostructures fabricated by inductively coupled plasma etching using Ag etch masks, which were easily formed by spin-coating Ag ink and subsequent sintering process on a hotplate without any lithography process and complicated equipments, for compound semiconductor based solar cell applications. This lithography-free technique is a simple, cost-effective, and high throughput method. The fabricated AlInP nanostructures demonstrated drastically reduced the hemispherical reflectance and solar-weighted reflectance (SWR) compared to that of bulk AlInP in the wavelength range of 300-870 nm. The incident angle-dependent SWR of the AlInP nanostructures remained below 4% up to an incident angle of 50°. Therefore, the biomimetic antireflective AlInP nanostructures fabricated by using the lithography-free method hold great potential for use in compound semiconductor based solar cell applications.
机译:我们呈现通过使用Ag蚀刻掩模的电感耦合等离子体蚀刻制造的生物浸渍抗反射alinP纳米结构,其通过旋涂Ag油墨和随后的热板上的烧结过程而没有任何光刻工艺和复杂的设备,用于化合物半导体基于基于的太阳能电池应用。这种无光刻技术是一种简单,经济效益和高通量的方法。与波长范围为300-870nm的波长范围的散装alinp,制造的alinp纳米结构显着降低了半球形反射率和太阳加权反射率(SWR)。 AlinP纳米结构的入射角依赖性SWR仍然低于4%,直到50°的入射角。因此,通过使用光刻法制造的仿生抗反射alinP纳米结构在基于化合物半导体的太阳能电池应用中具有很大的应用。

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