Simulation and optimization of Tri-Gates in a 22 nm hybrid Tri-Gate/planar process

摘要

A Tri-Gate structure built into a planar 22 nm bulk process was investigated by 3-D device simulations (Sentaurus D-2010). The planar process flow sequence was extended with extra Tri-Gate patterning, but otherwise all implants were shared, as could be done in simultaneous processing of planar and Tri-Gate CMOS. A comparison of planar and Tri-Gate transistors with the same planar dopant profiles shows a substantial improvement of subthreshold slope, DIBL, and VT-rolloff for Tri-Gates. The electrical behavior of the Tri-Gate transistor has been studied for various Tri-Gate heights and widths. A large space of Tri-Gate dimensions outperformed planar in terms of electrostatics and ION-IOFF characteristics.