Atomic force microscope measurement of channel temperature in GaAsdevices

摘要

The channel temperature of Gallium Arsenide (GaAs) devices wasquantitatively measured using scanning thermal microscopy (SThM), whichis a variation of atomic force microscopy (AFM). The temperature of thedevices was also characterized by infrared (IR) imaging and thermalmodeling. It was found that the measured SThM temperature values agreedvery well. With the calculated values from the model, and were higherthan those found by IR, as predicted. In contrast to most published AFMresults that have reported only qualitative and indirectsemi-quantitative thermal information about the sample, the resultspresented here can be used directly to accurately determine an absolutetemperature of the device at any point that can be probed at the topsurface