ANALYTICAL MODEL FOR NON-SELF ALIGNED BURIED P-LAYER SiC MESFET

摘要

A new analytical model for saturation region is proposed for buried p-layer 4H-SiC MESFET considering the effect of B.P. layer. This model provides the static characteristics, small signal parameters and is also extended to predict capacitance-voltage characteristics of the device. The results so obtained are in excellent agreement with experimental data confirming the validity of this model.