PROCESS FOR MANUFACTURING A COMPOSITE STRUCTURE INCLUDING A THIN SIC MONOCRISTALLINE SIC LAYER ON A SIC SUPPORT SUBSTRATE

摘要

The invention relates to a method of manufacturing a composite structure comprising a thin film of monocrystalline silicon carbide disposed on a support substrate of silicon carbide, the method comprising: a) a step of providing a donor substrate made of carbon carbide. monocrystalline silicon, b) a step of ionic implantation of light species in the donor substrate, to form a buried brittle plane delimiting the thin layer between said buried brittle plane and a free surface of said donor substrate, c) a succession of n steps forming crystallized support layers, with n greater than or equal to 2; the n crystallized support layers being arranged on the front face of the donor substrate successively on top of each other, and forming the support substrate; each forming step comprising: - chemical vapor deposition assisted by direct liquid injection, at a temperature below 900 ° C, to form a support layer, said support layer being formed by an at least partially amorphous SiC matrix, and having a thickness less than or equal to 200 microns; - a heat treatment of crystallization of the support layer, at a temperature less than or equal to 1000 ° C, to form a crystallized support layer, d) a separation step along the buried fragile plane, to form on the one hand a structure composite comprising the thin layer on the support substrate, and on the other hand the remainder of the donor substrate. Figure to be published with the abstract: No figure