PROCESS FOR MANUFACTURING A COMPOSITE STRUCTURE INCLUDING A THIN SIC MONOCRISTALLINE SIC LAYER ON A SIC SUPPORT SUBSTRATE

摘要

The invention relates to a method of manufacturing a composite structure comprising a thin film of monocrystalline silicon carbide disposed on a support substrate of silicon carbide, the method comprising: a) a step of providing a donor substrate of monocrystalline SiC , the donor substrate comprising a donor layer produced by epitaxial growth on an initial substrate, the donor layer having a density of crystalline defects lower than that of the initial substrate, b) a step of ionic implantation of light species in the donor layer, to form a buried brittle plane delimiting the thin layer between said buried brittle plane and a free face of said donor layer, c) a succession of n stages of forming support layers, with n greater than or equal to 2; the n support layers being arranged on the donor layer successively one on top of the other, and forming the support substrate; each forming step comprising a chemical vapor deposition, at a temperature between 400 ° C and 1100 ° C, to form a support layer of polycrystalline SiC; the n chemical vapor deposition being carried out at n different temperatures, d) a separation step along the buried fragile plane, to form on the one hand a composite structure comprising the thin layer on the support substrate, and on the other hand the rest of the donor substrate, e) a mechanical and / or chemical treatment step (s) of the composite structure. Figure to be published with the abstract: No figure