SIMULATION METHOD FOR CHARACTERISTICS OF TRANSISTOR, SIMULATION METHOD FOR CHARACTERISTICS OF ELECTRONIC CIRCUIT INCLUDING TRANSISTOR, AND NONTRANSITORY RECORDING MEDIUM THAT STORES SIMULATION PROGRAM FOR CHARACTERISTICS OF TRANSISTOR

摘要

A simulation method includes a process of calculating a transient charge density q_T of trapped charges after applying a voltage between a gate electrode and a semiconductor layer of a transistor, the charge density q_T being calculated with a time variance of the charge density q_T being expressed by a function obtained by superimposing multiple exponential functions having mutually different time constants.