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METHOD OF ANALYSIS OF LEAD TELLURIDE BY STRIPPING VOLTAMMETRY
METHOD OF ANALYSIS OF LEAD TELLURIDE BY STRIPPING VOLTAMMETRY
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机译:溶出伏安法测定痕量碲的方法。
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use: the u044du043bu0435u043au0442u0440u043eu0430u043du0430u043bu0438u0442u0438u0447u0435u0441u043au043eu0439 chemistry, analysis of semiconductor compounds. the essence of the method: focusing elements in the u0441u0442u0435u043au043bu043eu0443u0433u043bu0435 - native u044du043bu0435u043au0442u0440u043eu0434u0435 of 0.005, 0.05 m solution u043du0437u0440u043eu0437. concentration of lead u043fu0440u043eu0432u043eu0434u00a0u0442 within the capabilities of -1.20 to 1.30, and the concentration of tellurium from 0.90 to - 1.0 in a relatively u0445.u0441.u044d. 1u0442u0430u0431u043b 2 il.
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