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Pulsed or tailored bias for filling gaps with low dielectric constant material
Pulsed or tailored bias for filling gaps with low dielectric constant material
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机译:脉冲或量身定制的偏压,用于用低介电常数材料填充间隙
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摘要
A variable high frequency rf bias is applied to a substrate during a high density plasma CVD process for filling gaps in integrated circuits with low dielectric material. The rf bias is varied by applying it as a pulse or by tailoring the magnitude of the rf bias. Preferably, a gasified organic precursor compound comprising silicon, oxygen and carbon atoms is flowed into the plasma CVD reaction chamber. Preferably, no reactive oxygen gas is used in the reaction chamber.
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