Hydrogenation of dangling bonds at a gate oxide/semiconductor interface

摘要

A hydrogen or deuterium containing silicon nitride or oxide layer (. é. 1-5% atomic H) is formed over a gate and/or a field oxide region. The hydrogen containing layer is used as a hydrogen source for passivating dangling bonds present at an interface between the gate oxide and the underlying silicon substrate. The activation energy for diffusing the hydrogen from the hydrogen containing layer to the interface may be provided by passing a current through the semiconductor layer 14. The hydrogen containing layer may be patterned to form a gate sidewall 38 or a field oxide sidewall 56. The passivation of the dangling bonds at the gate oxide / Si interface reduces interface trap densities to less than 10SP10/SP cmSP-2/SP eV and mitigates the effects of hot carrier ageing.