SOI CMOS CMOS INTERFACE CIRCUIT FORMED IN SILICON-ON-INSULATOR SUBSTRATE

摘要

CMOS circuits formed on silicon-on-insulator (SOI) substrates include MOSFETs, which include drains and diffusers that extend through the silicon layer to the surface of the insulating layer. Each of the drains of the N-channel and P-channel MOSFETs is also provided as a terminal (anode and cathode) of a diode connected in series with the MOSFET. This structure allows the CMOS device to be manufactured as a fully symmetrical structure without having additional processing steps other than the processing steps common to fabricating conventional CMOS devices.