FABRICATION OF CUINXGA1-XSE2 THIN FILMS SOLAR CELL BY SELENIZATION PROCESS WITH SE SOLUTION

摘要

PURPOSE: A method for manufacturing a CIGS light absorbing layer is provided to improve the uniformity of particles and surface of the CIGS light absorbing layer by coating selenium. CONSTITUTION: A copper-indium-gallium thin film layer is formed on the upper side of a substrate. Solutions with selenium or selenium compound is coated or printed on the thin film layer under an inactive gas atmosphere. The substrate coated with the solutions including selenium or selenium compound is dried at 120 degrees centigrade for 12 hours. A CIGS light emitting layer is formed by thermally processing the substrate under the inactive gas atmosphere. The thin film layer is made of copper, indium, gallium, copper indium alloy and copper gallium alloy.