首页> 外国专利> FABRICATION OF CUINXGA1-XSE2 THIN FILMS SOLAR CELL BY PASTE COATING AND SELENIZATION PROCESS WITH SE SOLUTION

FABRICATION OF CUINXGA1-XSE2 THIN FILMS SOLAR CELL BY PASTE COATING AND SELENIZATION PROCESS WITH SE SOLUTION

机译:通过SE溶液的涂膜和硒化工艺制备CUINXGA1-XSE2薄膜太阳电池。

摘要

PURPOSE: A method for manufacturing a copper-indium-gallium-selenium(CIGS)-based optical absorbing layer using a selenium solution is provided to reduce cost required for operational facilities by applying or printing selenium or a selenium compound in a solution state. CONSTITUTION: Copper-indium-gallium mixed source is dissolved, and poly-propylene carbonate is added to the dissolved solution in order to prepare ink. The ink is applied or printed on the upper side of a substrate. The substrate is thermally processed under an insert gas atmosphere to form a copper-indium-gallium thin film layer. Selenium or a selenium compound in a solution state is applied or printed on the copper-indium-gallium thin film layer. A drying process is followed. The dried thin film layer is thermally processed to form a CIGS-based optical absorbing layer.
机译:目的:提供一种使用硒溶液制造基于铜铟镓硒(CIGS)的光吸收层的方法,以通过以溶液状态施加或印刷硒或硒化合物来降低操作设施所需的成本。组成:将铜铟镓混合源溶解,然后将聚碳酸亚丙酯添加到溶解的溶液中以制备墨水。油墨被施加或印刷在基板的上侧。在插入气体气氛下对该基板进行热处理,以形成铜铟镓薄膜层。将硒或处于溶液状态的硒化合物施加或印刷在铜铟镓薄膜层上。进行干燥过程。对干燥的薄膜层进行热处理以形成基于CIGS的光吸收层。

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