MULTIPLE-VALUED LOGIC CIRCUIT USING DUAL GATE SINGLE ELECTRON TRANSISTOR WITH MOS TRANSISTOR AND MULTIPLE LOGIC SYSTEM USING THE SAME

摘要

PURPOSE: A dual gate single electron transistor and a multi-valued logic circuit using a MOS transistor and a multi-valued logic system using the same are improve degree of integration of a semiconductor device including a VLSI(Very Large Scale Integration) and an ULSI(Ultra Large scale Integration) by providing a multi-valued delta literal gate circuit. CONSTITUTION: A plurality of constant-current sources(VDD) is applied to a fixed current. A dual gate single electron transistor comprises a gate applied an input voltage of a same potential level. A side gate input voltage of different potential levels is applied to the each side gate. A drain is respectively connected to a constant current source side. A source is respectively connected to the voltage source of the different potential levels which represents a low rank logical value of a multi-valued logical circuit. A MOS transistor is serially connected between a plurality of constant-current sources and a plurality of dual gate single electron transistors. A plurality of constant-current sources transfers a current from a plurality of constant-current sources to the each dual gate single-electron transistor according to bias voltage.