METHOD FOR FABRICATING A REAR CONTACT HETEROJUNCTION INTRINSIC THIN LAYER SILICON SOLAR CELL WITH ONLY TWO MASKING STEPS AND RESPECTIVE SOLAR CELL

摘要

A rear contact heterojunction solar cell (1) and a fabricating method for such solar cell are proposed. 1. The method comprise providing a silicon substrate (3) with a rear surface (5); depositing a thin layer (7) of i-a-Si over at least parts of the rear surface (5); depositing a first semiconductor layer (13) comprising a doped semiconducting material of a first doping polarity wherein the first semiconductor layer (13) is deposited through a first mask such that it covers first portions of a back surface (9) of the i-a-Si layer (7); depositing a first separation layer (19) comprising an electrically insulating material wherein the first separation layer (19) is deposited through the first mask such that it covers at least an entire back surface (17) of the first semiconductor layer (13); depositing a second semiconductor layer (21) comprising a doped semiconducting material of a second doping polarity wherein the second semiconductor layer (21) is deposited though a second mask (27) at regions of second portions. Due to the proposed fabrication method, in the finalized solar cell (1), the second semiconductor layer (21) is separated from the first semiconductor layer (13) by at least the intermediate first separation layer (19). Simple fabrication using only two masking steps and high efficiency with high fill factors of the resulting HIT solar cell may be achieved.