Conductive GaAs single crystal and the conductive GaAs single crystal substrates and their fabrication method .

摘要

An electrically conductive GaAs crystal has an atomic concentration of Si more than 1 x 10SP17/SP cmSP-3/SP, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cmSP-2/SP. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2 x 10SP2/SP cmSP-2/SP or at least 1 x 10SP3/SP cmSP-2/SP.