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Monolithically integrated self-aligned GaN-HEMTs and Schottky diodes and method of fabricating the same
Monolithically integrated self-aligned GaN-HEMTs and Schottky diodes and method of fabricating the same
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机译:单片集成自对准GaN-HEMT和肖特基二极管及其制造方法
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摘要
Monolithic integration of high-frequency GaN-HEMTs and GaN-Schottky diodes. The integrated HEMTs/Schottky diodes are realized using an epitaxial structure and a fabrication process which reduces fabrication cost. Since the disclosed process preferably uses self-aligned technology, both devices show extremely high-frequency performance by minimizing device parasitic resistances and capacitances. Furthermore, since the Schottky contact of diodes is formed by making a direct contact of an anode metal to the 2DEG channel the resulting structure minimizes an intrinsic junction capacitance due to the very thin contact area size. The low resistance of high-mobility 2DEG channel and a low contact resistance realized by a n+GaN ohmic regrowth layer reduce a series resistance of diodes as well as access resistance of the HEMT.
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