VERTICAL TYPE SCHOTTKY BARRIER DIODE USING GALLIUM NITRIDE SUBSTRATE AS DRIFT LAYER

摘要

PROBLEM TO BE SOLVED: To provide a Schottky barrier diode including a GaN substrate, which has high voltage resistance and which is adapted for a large current and reduced in size.SOLUTION: A Schottky barrier diode using an n-GaN substrate as a drift layer comprises: the n-GaN substrate having a predetermined impurity density and polished into a mirror-like condition so that the n-GaN substrate has one face made one of N and Ga faces, and the other face made the other of N and Ga faces; an n-GaN layer formed on the one face; an ohmic electrode formed on the n-GaN layer; a Schottky electrode formed on the other face of the n-GaN substrate; and an insulative film or a p-GaN layer formed on the surface on the side of the Schottky electrode, which overlaps with the Schottky electrode.SELECTED DRAWING: Figure 4