A method and semiconductor device based on a deformation technology in three-dimensional transistors on the basis of a deformed channel half conductor material

摘要

A method for the production of a transistor of a semiconductor component, which method comprises:An elongated semiconductor body form of a base material has a mass percentage;Providing a deformed half conductor channel material on the surfaces of the elongated semiconductor body by forming a deformed semiconductor material on the base material has a mass percentage before the forming of the elongated semiconductor body and form of a further deformed semiconductor material on the elongate semiconductor body according to the formation of the elongated semiconductor body, wherein the deformed semiconductor material, a pronounced deformation component along the direction of current flow; andForming a gate electrodes structure over the elongate semiconductor body, wherein the gate electrodes structure, a gate electrode for controlling a channel region of the elongated semiconductor body has.