FIELD EFFECT TRANSISTOR COMPRISING BLACK PHOSPHORUS AND BACK PHOSPHORUS REDUCTION AND OXIDATION PREVENTION METHOD BY TRANSITION METAL

摘要

The present invention relates to a method of reducing an oxide layer formed on a black phosphorus surface using a transition metal. The method includes a step of peeling off a black debris; and a step of depositing a transition metal on the exfoliated black phosphorus surface. According to the present invention, by depositing a transition metal on a black phosphorus surface on which an oxide layer is formed, electrical performance degradation due to the oxidation of black phosphorus can be prevented by a simple method. It can be used for a low dimensional high performance semiconductor material.;COPYRIGHT KIPO 2016