FIELD EFFECT TRANSISTOR COMPRISING BLACK PHOSPHORUSBLACK AND PHOSPHORUS REDUCTION AND PASSIVATION METHOD BY TRANSITION METAL

摘要

The present invention relates to a method for reducing an oxide layer formed on a surface of a black phosphorus using a transition metal, comprising the steps of: peeling a black debris; And depositing a transition metal on the exfoliated black surface.According to the present invention, by depositing a transition metal on the surface of a black phosphorus on which an oxide layer is formed, it is possible to improve the electrical performance degradation due to the oxidation of black phosphorus by a simple method, It is effective.