Gate Drain Geometry Effect on the Current Voltage Characteristics of GaAs MESFETs.

摘要

We investigated the effect of gate-drain distance on gallium arsenide MESFET current-voltage characteristics. DC characteristics of several GaAs MESFETS are determined and compared to results from a computer implementation of a physically based, analytical model by Chang and Day. Their model is modified to account for the effect of longer gate-drain distance, and shows excellent agreement with measured I-V curves across the full range of device geometrics tested.