SUB-PICOSECOND SWITCHING OF A SEMICONDUCTOR MICROLASER USING HOT-CARRIER EFFECTS - INFLUENCE OF TRANSVERSE EFFECTS

摘要

Recently it has been shown experimentally that transient carrier heating and subsequent cooling can be used to switch the emission of a semiconductor vertical cavity surface emitting laser off and back on with a time constant of about 400 fs. Were we show by computer simulations that transverse variations of the carrier distribution functions have a significant influence on tile ultrafast emission dynamics even for a transverse and longitudinal single-mode cavity. The interplay with transient carrier heating leads to dynamic overshooting and oscillations. A simple equivalent model is a cavity containing the gain medium and a saturable absorber. [References: 5]