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Optical properties of pure and transition metal-doped indium oxide

机译:纯和过渡金属掺杂的氧化铟的光学性质

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摘要

The band structure, the dielectric function, the reflectivity, therefractive index and the oscillator strength sum rule were cal-culated for pure In_2O_3, and alloyed In_(1.5)T_(0.5)O_3 (where T repre-sents Sc, Y, La and Ac) using density functional theory(DFT). The full potential linearized augmented plane wave(FP-LAPW) method was used with the local density ap-proximation (LDA + U). Calculations of the optical spectrawere performed for the energy range 0-30 eV. The calcu-lated results indicate that the upper valance bands of In_2O_3 show a small dispersion and the value of the band gap in-creases for Sc and Y dopants and decreases for Ac and Ladopants. The calculations indicate that there are two bandgaps for In_2O_3. The first shows a strong optical absorption, asa direct band gap occurs from a 0.81 eV energy level belowthe top of valence band. The second shows a much weakerabsorption from the top of the valence band to the bottomof the conduction band. The refractive index for In_2O_3is1.69 nm at 800 nm, near the visible region.
机译:计算了纯In_2O_3和合金化的In_(1.5)T_(0.5)O_3的能带结构,介电函数,反射率,折射率和振荡器强度和规则(其中T表示Sc,Y,La和Ac)使用密度泛函理论(DFT)。全电势线性化增强平面波(FP-LAPW)方法与局部密度近似(LDA + U)一起使用。在0-30 eV的能量范围内进行了光谱的计算。计算结果表明,In_2O_3的上价带显示出较小的色散,Sc和Y掺杂剂的带隙值增加,而Ac和Ladopant的带隙值减小。计算表明In_2O_3有两个带隙。第一个显示出强大的光吸收,因为直接价带隙发生在价带顶部以下的0.81 eV能级。第二个显示从价带顶部到导带底部的吸收弱得多。 In_2O_3在800 nm处的可见区域附近的折射率为1.69 nm。

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