Crystallographic polarity and crystallinity characterization of polar and nonpolar GaN epitaxial films by X-ray diffraction analyses

摘要

We have succeeded in fabricating a prototype of a new X-ray diffraction (XRD) system that enables both conventional high resolution XRD (HR-XRD) and crystallographic polarity characterization in the laboratory. By applying a polarity characterization with XRD to a polar GaN epitaxial film, it was determined that a polar GaN film grows in the Ga-polar direction. On studying a nonpolar GaN film it was revealed that the polar direction lying in the surface plane of the film can be identified by analyzing the asymmetric lattice planes. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.