Reduction in defect density over whole area of (1(1)over-bar00) m-plane GaN using one-sidewall seeded epitaxial lateral overgrowth

摘要

We succeeded in growing low-defect-density m-plane GaN on grooved m-plane GaN with SiO2 masks on the terrace region. By changing the V/III ratio, we were able to increase the growth rate of GaN on one sidewall, thereby achieving one-sidedwall lateral growth. Dislocations and stacking faults were decreased markedly over the whole area. The densities of dislocations and stacking faults were 1.3 x 10(7) (cm(-2)) and < 2.6 x 10(4) (cm(-1)), respectively. The photoluminescence intensity was 213 times higher than that of an m-plane GaN template on an m-plane 4H-SiC substrate. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.