Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells

摘要

GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells (MQWs) were fabricated from planar wafers with different quantum well widths using holographic lithography and subsequent reactive ion etching. Although the etching process led to a reduction in the MQW related luminescence, the etch related damage was successfully healed through annealing in NH3/N-2 mixtures under optimized conditions, and the annealed nanopatterned samples exhibited enhanced photoluminescence (PL) compared to the planar wafers. Angular-resolved PL measurements revealed extraction of guided modes from the nanopillar and nanostripe arrays. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.