Selective growth of GaN nanocolumns by Al thin layer on substrate

摘要

For the application of GaN nanocolumns, one of the most important issues is to control their shapes and positions. We demonstrated a selective RF-MBE growth of GaN nanocolumns using patterned Al thin pre-deposited layers on a substrate via their nitridation. As the nanocolumns were grown at the edge of the nitrided Al patterns, a possibility of controlling the shape and the position of nanocolumns was suggested. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.