From evidence of strong light-matter coupling to polariton emission in GaN microcavities

摘要

We present both experimental and theoretical results which outline our development of the molecular beam epitaxy of GaN microcavities on (111) silicon. In particular we show that although in this material system the strong-light matter coupling regime can be observed at 300 K even with relatively low quality factor structures (Q = 60) in reflectivity measurements, it is necessary to increase the Q-factor by at least a factor of two to observe strong coupling in the emission. For an optimized microcavity structure (Q = 160), polaritonic emission is observed at 300 K, with the origin of the broadened luminescence features confirmed by co-incident reflectivity measurements. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.