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Metallic temperature dependence of resistivity in perchlorate doped polyacetylene

机译:高氯酸盐掺杂的聚乙炔中电阻率的金属温度依赖性

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We have measured the electrical resistivity (rho) and thermoelectric power (TEP) of the perchlorate (ClO4-) doped stretch oriented polyacetylene (PA) firm. For the highly conducting samples (sigma(RT) approximate to 41000 Slcm), the temperature dependence of the four-probe resistivity shows positive temperature coefficient of resistivity (TCR) from T = 1.5 to 300 K. For the less conducting samples, the four-probe resistivity data show the crossover of TCR with a broad minimum peak at T = T* approximate to 200 K. For samples of sigma(RT) greater than or equal to 20000 S/cm, rho(1.5 K)/rho(300 K) < 1, i.e., the resistivity at 1.5 K is lower than the room temperature resistivity value. The temperature dependence of the TEP shows diffusive linear metallic TEP becoming temperature independent below 40 K. Unlike the others who used Cu(ClO4)(2)for the ClO4- doping, the initial doping material we used is anhydrous Fe(ClO4)(3) which is crucial to obtain positive TCR from T = 1.5 to 300 K. (C) 1998 Elsevier Science S.A. All rights reserved. [References: 22]
机译:我们已经测量了高氯酸盐(ClO4)掺杂的拉伸取向聚乙炔(PA)公司的电阻率(rho)和热电功率(TEP)。对于高导电率样品(sigma(RT)大约为41000 Slcm),四探针电阻率的温度依赖性显示出T = 1.5至300 K的正电阻率温度系数(TCR)。对于导电率较低的样品,四个探针电阻率数据显示TCR的交叉点在T = T *处有一个宽的最小峰值,大约为200K。对于sigma(RT)大于或等于20000 S / cm的样品,rho(1.5 K)/ rho(300) K)<1,即1.5K下的电阻率低于室温电阻率值。 TEP的温度依赖性表明,线型金属TEP扩散温度在40 K以下变得与温度无关。与其他使用Cu(ClO4)(2)进行ClO4-掺杂的人不同,我们使用的初始掺杂材料是无水Fe(ClO4)(3 ),这对于获得T = 1.5至300 K的正TCR至关重要。(C)1998 Elsevier Science SA保留所有权利。 [参考:22]

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