Electrochemical cleavage of a Si-Si bond in poly[(tetraethyldisilanylene)oligo(2,5-thienylene)] films

摘要

Electrochemical stability of poly[(tetraethyldisilanylene)oligo(2,5-thienylene)] (DS mT; m refers to the number of thienylene units) films is investigated by means of in situ W-vis-NIR spectroscopy, in situ and ex situ fluorescence spectroscopy, gel-permeation chromatography, and FT-IR spectroscopy. It is found that a Si-Si bond in DSmT film with m = 3 to 5 is cleaved at potentials as low as 0.5 V versus Ag/Ag+ in acetonitrile, resulting in dissolution of oligothiophene-like species. The decomposed products are oxidized to form another polymer film on the surface of an original DSmT film and a doping reaction observed earlier takes place on the composite polymer film. (C) 1998 Elsevier Science S.A. All rights reserved. [References: 8]